11dq06 Schottky Diode 51185t

Bulletin PD-2.288 rev. F 11/04

11DQ05 11DQ06 SCHOTTKY RECTIFIER

1.1 Amp

Description/ Features

Major Ratings and Characteristics Characteristics

Values

Units

IF(AV) Rectangular waveform

1.1

A

50/60

V

IFSM @ tp = 5 µs sine

150

A

VF

@ 1 Apk, TJ = 125°C

0.53

V

TJ

range

- 40 to 150

°C

VRRM

The 11DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Low profile, axial leaded outline High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free plating

CASE STYLE AND DIMENSIONS

Conform to JEDEC Outline DO-204AL (DO-41) Dimensions in millimeters and inches

www.irf.com

1

11DQ05, 11DQ06 Bulletin PD-2.288 rev. F 11/04

Voltage Ratings Part number VR

Max. DC Reverse Voltage (V)

11DQ05

11DQ06

50

60

VRWM Max. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current

11DQ..

Units

1.1

A

Conditions 50% duty cycle @ TC = 84°C, rectangular wave form

* See Fig. 4 IFSM

Max. Peak One Cycle Non-Repetitive

150

5µs Sine or 3µs Rect. pulse

Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied

A

Surge Current * See Fig. 6

25

EAS

Non-Repetitive Avalanche Energy

2.0

mJ

IAR

Repetitive Avalanche Current

1.0

A

TJ = 25 °C, IAS = 1 Amps, L = 4 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical

Electrical Specifications Parameters VFM

IRM

11DQ.. Units Conditions

Max. Forward Voltage Drop * See Fig. 1 (1)

0.58 0.76 0.53

V V V

@ 1A @ 2A @ 1A

0.64

V

@ 2A

Max. Reverse Leakage Current

1.0

mA

* See Fig. 2

TJ = 25 °C

TJ = 25 °C TJ = 125 °C VR = rated VR

(1)

11

mA

TJ = 125 °C

CT

Typical Junction Capacitance

55

pF

VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C

LS

Typical Series Inductance

dv/dt Max. Voltage Rate of Change

8.0

nH

10000

V/µs

Measured lead to lead 5mm from package body (Rated VR)

(1) Pulse Width < 300µs, Duty Cycle <2%

Thermal-Mechanical Specifications Parameters

11DQ.. Units Conditions

TJ

Max. Junction Temperature Range (*)

-40 to 150

Tstg

Max. Storage Temperature Range

-40 to 150

°C °C

RthJA Max. Thermal Resistance Junction to Ambient

100

°C/W DC operation Without cooling fin

RthJL Typical Thermal Resistance Junction to Lead

81

°C/W DC operation (See Fig. 4)

wt

Approximate Weight

0.33(0.012) g (oz.)

Case Style

DO-204AL(DO-41)

(*) dPtot dTj

2

<

1 Rth( j-a)

thermal runaway condition for a diode on its own heatsink

www.irf.com

11DQ05, 11DQ06 Bulletin PD-2.288 rev. F 11/04

Reverse Current - IR(mA)

100

10

T J = 150˚C

10 1

125˚C

0.1 0.01

25˚C

0.0001 0

10

20 30 40 50 60 Reverse Voltage - VR(V)

70

Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage

T J = 150˚C T J = 125˚C

1

T J = 25˚C

100

0.1 0

0.2

0.4

0.6

0.8

1

1.2

Junction Capacitance - CT (pF)

Instantaneous Forward Current - IF (A)

0.001

T J = 25˚C

Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics

10 0

10

20

30

40

50

60

70

Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage

www.irf.com

3

11DQ05, 11DQ06 Bulletin PD-2.288 rev. F 11/04

0.8

140

Average Power Loss (Watts)

Allowable Case Temperature (°C)

160

DC

120 100 80 Square wave (D = 0.50) 80% Rated Vr applied

60 40 20

D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75

0.6

0.4

RMS Limit

DC

0.2 0.4 0.6 0.8

1

0.2

see note (2)

0

0 0

0.2 0.4 0.6 0.8

1

1.2 1.4 1.6

0

Average Forward Current - IF(AV) (A)

1.2 1.4 1.6

Average Forward Current - IF(AV) (A)

Fig. 4 - Maximum Ambient Temperature Vs. Average Forward Current, Printed Circuit Board Mounted

Fig. 5 - Forward Power Loss Characteristics

Non-Repetitive Surge Current-IFSM (A)

1000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge

100

10 10

100

1000

10000

Square Wave Pulse Duration - tp (microsec) Fig. 6 - Maximum Non-Repetitive Surge Current

(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR

4

www.irf.com

11DQ05, 11DQ06 Bulletin PD-2.288 rev. F 11/04

Ordering Information Table Device Code

11

D

Q

06

TR

1

2

3

4

5

1

-

11 = 1.1A (Axial and small packages - Current is x10)

2

-

D = DO-41 package

3

-

Q = Schottky Q.. Series

4

-

10 = Voltage Ratings

5

-

TR = Tape & Reel package ( 5000 pcs) -

06 = 60V 05 = 50V

= Box package (1000 pcs)

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales information. 11/04

www.irf.com

5